? 2007 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 150 v v dgr t j = 25 c to 175 c, r gs = 1m 150 v v gsm 30 v i d25 t c = 25 c * 90 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 250 a i a t c = 25 c4a e as t c = 25 c 750 j dv/dt i s i dm , v dd v dss , t j 175 c 10 v/ns p d t c = 25 c 455 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque(to-220,to-3p,to-247) 1.13/10 nm/lb.in. f c mounting force (to-263) 10..65/2.2..14.6 n/lb. weight to-263 2.5 g to-220 3 g to-3p 5.5 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 150 v v gs(th) v ds = v gs , i d = 1ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 17 20 m trench gate power mosfet n-channel enhancement mode avalanche rated features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect v dss = 150v i d25 = 90a r ds(on) 20m ds99857(08/07) IXTA90N15T ixth90n15t ixtp90n15t ixtq90n15t preliminary technical information to-247 6 g applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor control z uninterruptible power supplies to-220 (i xtp ) to-3p (ixtq) g d s to-247 (ixth) to-263 (i xta ) g s (tab) (tab) (tab) (tab) g d s
ixys reserves the right to change limits, test conditions, and dimensions. IXTA90N15T ixth90n15t ixtp90n15t ixtq90n15t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 40 69 s c iss 4100 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 560 pf c rss 92 pf t d(on) resistive switching times 24 ns t r v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 22 ns t d(off) r g = 3.3 (external) 44 ns t f 19 ns q g(on) 80 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 20 nc q gd 20 nc r thjc 0.33 c/w r thch to-220 0.25 c/w to-3p, to-263, to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 90 a i sm repetitive 300 a v sd i f = 50a, v gs = 0v, note 1 1.2 v t rr i f =45a, -di/dt = 250a/ s 110 ns v r = 75v, v gs = 0v note 1: pulse test, t 300 s; duty cycle, d 2%. * : current may be limited by external terminal current limit. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2007 ixys corporation, all rights reserved IXTA90N15T ixth90n15t ixtp90n15t ixtq90n15t to-263 (ixta) outline to-220 (ixtp) outline pins: 1 - gate 2 - drain 3 - source to-3p (ixtq) outline ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
ixys reserves the right to change limits, test conditions, and dimensions. IXTA90N15T ixth90n15t ixtp90n15t ixtq90n15t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 240 0 2 4 6 8 10 12 14 16 18 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 45a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 90a i d = 45a fig. 5. r ds(on) normalized to i d = 45a value vs. drain current 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 40 80 120 160 200 240 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit
? 2007 ixys corporation, all rights reserved fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 100 110 33.544.555.56 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 102030405060708090100110120 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 40 80 120 160 200 240 280 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020304050607080 q g - nanocoulombs v gs - volts v ds = 75v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w IXTA90N15T ixth90n15t ixtp90n15t ixtq90n15t
ixys reserves the right to change limits, test conditions, and dimensions. IXTA90N15T ixth90n15t ixtp90n15t ixtq90n15t ixys ref: t_90n15t(5g)8-08-07-a fig. 14. resistive turn-on rise time vs. drain current 13 15 17 19 21 23 25 27 29 31 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 i d - amperes t r - nanosecond s r g = 3.3 v gs = 10v v ds = 75v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12 14 16 r g - ohms t r - nanoseconds 23 24 25 26 27 28 29 30 31 32 33 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 90a i d = 45a fig. 16. resistive turn-off switching times vs. junction temperature 16 17 18 19 20 21 22 23 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 30 35 40 45 50 55 60 65 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 3.3 , v gs = 10v v ds = 75v i d = 90a i d = 45a fig. 17. resistive turn-off switching times vs. drain current 16 17 18 19 20 21 22 20 30 40 50 60 70 80 90 i d - amperes t f - nanoseconds 30 35 40 45 50 55 60 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 10v v ds = 75v t j = 125oc t j = 25oc t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 12 14 16 18 20 22 24 26 28 30 32 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 3.3 v gs = 10v v ds = 75v i d = 90a i d = 45a fig. 18. resistive turn-off switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 2 4 6 8 10 12 14 16 r g - ohms t f - nanoseconds 20 30 40 50 60 70 80 90 100 110 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 75v i d = 45a, 90a
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